 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDH20N40 / FDP20N40 October 2002 FDH20N40 / FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as * PFC Boost * Two-Switch Forward Converter * Single Switch Forward Converter * Flyback Converter * Buck Converter * High Speed Switching Features * Low Gate Charge Requirement Qg results in Simple Drive * Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness * Reduced rDS(ON) * Reduced Miller Capacitance and Low Input Capacitance * Improved Switching Speed with Low EMI * 175C Rated Junction Temperature Package JEDEC TO-247 SOURCE DRAIN GATE Symbol JEDEC TO-220AB D SOURCE DRAIN GATE G DRAIN (FLANGE) DRAIN (FLANGE) S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25oC, VGS = 10V) Continuous (TC = Pulsed (Note 1) PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature Soldering Temperature for 10 seconds Mounting Torque, 8-32 or M3 Screw 100oC, VGS = 10V) 20 14 80 273 1.82 -55 to 175 300 (1.6mm from case) 10ibf*in (1.1N*m) A A A W W/oC o o Ratings 400 30 Units V V C C Thermal Characteristics RJC RCS RJA RJA Thermal Resistance Junction to Case Thermal Resistance Case to Sink, Flat, Greased Surface Thermal Resistance Junction to Ambient (TO-247) Thermal Resistance Junction to Ambient (TO-220) 0.55 0.24 40 62 o C/W C/W C/W oC/W o o (c)2002 Fairchild Semiconductor Corporation FDH20N40 / FDP20N40 Rev. A, FDH20N40 / FDP20N40 Package Marking and Ordering Information Device Marking FDH20N40 FDP20N40 Device FDH20N40 FDP20N40 Package TO-247 TO-220 Reel Size Tube Tube Tape Width Quantity 30 50 Electrical Characteristics TC = 25C (unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units Statics BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V V/C Reference to 25C ID = 1mA VGS = 10V, ID = 10A VDS = VGS, ID = 250A VDS = 400V VGS = 0V VGS = 20V TC = 25oC TC =150oC 400 2.0 0.43 0.200 3.5 0.216 4.0 25 250 100 V A nA V BVDSS/TJ Breakdown Voltage Temp. Coefficient rDS(ON) VGS(th) IDSS IGSS Drain to Source On-Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Dynamics gfs Qg(TOT) Qgs Qgd td(ON) tr td(OFF) tf CISS COSS CRSS Forward Transconductance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 50V, ID = 10A VGS = 10V VDS = 320V ID = 20A VDD = 200V ID = 20A RG = 10 RD = 15.4 VDS = 25V, VGS = 0V f = 1MHz 10 35 10 12 12.4 32.5 30 34 1840 245 18 42 12 14.4 S nC nC nC ns ns ns ns pF pF pF Avalanche Characteristics EAS IAR Single Pulse Avalanche Energy (Note 2) Avalanche Current 1100 20 mJ A Drain-Source Diode Characteristics IS ISM VSD trr QRR Notes: 1: Repetitive rating; pulse width limited by maximum junction temperature 2: Starting TJ = 25C, L = 5.5mH, IAS = 20A Continuous Source Current (Body Diode) Pulsed Source Current (Note 1) (Body Diode) Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge MOSFET symbol showing the integral reverse p-n junction diode. ISD = 20A D - 0.9 351 4.5 20 80 1.2 456 5.85 A A V ns C G S ISD = 20A, dISD/dt = 100A/s ISD = 20A, dISD/dt = 100A/s (c)2002 Fairchild Semiconductor Corporation FDH20N40 / FDP20N40 Rev. A FDH20N40 / FDP20N40 Typical Characteristics 100 100 ID, DRAIN TO SOURCE CURRENT (A) ID, DRAIN TO SOURCE CURRENT (A) TC = 25oC VGS DESCENDING 10V 7V 6.5V 6V 5.5V 10 5V TC = 175oC VGS DESCENDING 10V 7V 6.5V 6V 5.5V 10 5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1 1 10 100 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. Output Characteristics 40 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 50V 30 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 3.0 Figure 2. Output Characteristics 2.5 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID , DRAIN CURRENT (A) 2.0 20 TJ = 175oC 10 TJ = 25oC 1.5 1.0 0.5 VGS = 10V, ID = 10A 0.0 -50 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 -25 0 25 50 75 100 125 o 150 175 VGS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. Transfer Characteristics Figure 4. Normalized Drain To Source On Resistance vs Junction Temperatrue 15 VGS , GATE TO SOURCE VOLTAGE (V) 1000 CISS ID = 20A C, CAPACITANCE (pF) 200V 10 80V 320V 100 COSS 5 10 CRSS VGS = 0V, f = 1MHz 1 1 10 100 0 0 10 20 30 40 50 60 VDS , DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 5. Capacitance vs Drain To Source Voltage Figure 6. Gate Charge Waveforms For Constant Gate Current (c)2002 Fairchild Semiconductor Corporation FDH20N40 / FDP20N40 Rev. A FDH20N40 / FDP20N40 Typical Characteristics ISD , SOURCE TO DRAIN CURRENT (A) 40 35 100 ID, DRAIN CURRENT (A) 30 25 20 15 10 5 0 0.2 TJ = 175oC TJ = 25oC 100s 10 OPERATION IN THIS AREA LIMITED BY RDS(ON) 1 1ms 10ms DC TC = 25oC 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 1000 VSD , SOURCE TO DRAIN VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Source to Drain Diode Forward Voltage 20 Figure 8. Maximum Safe Operating Area ID, DRAIN CURRENT (A) 15 10 5 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) Figure 9. Maximum Drain Current vs Case Temperature ZJC , NORMALIZED THERMAL IMPEDANCE 2.0 1.0 0.50 0.20 0.1 0.10 PD 0.05 0.02 0.01 0.01 10-5 SINGLE PULSE 10-4 10-3 10-2 t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-1 100 t1 t1 , RECTANGULAR PULSE DURATION (s) Figure 10. Normalized Maximum Transient Thermal Impedance (c)2002 Fairchild Semiconductor Corporation FDH20N40 / FDP20N40 Rev. A FDH20N40 / FDP20N40 Test Circuits and Waveforms VDS tP L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG - BVDSS VDS VDD + VDD IAS 0.01 0 tAV Figure 11. Unclamped Energy Test Circuit Figure 12. Unclamped Energy Waveforms VDS RL Qg(TOT) VDS VGS = 10V VGS + VDD DUT Ig(REF) 0 VGS VGS = 1V Qg(TH) Qgs Ig(REF) 0 Qgd Figure 13. Gate Charge Test Circuit Figure 14. Gate Charge Waveforms VDS tON td(ON) RL VDS 90% tr tOFF td(OFF) tf 90% VGS + VDD DUT 0 10% 10% 90% VGS 50% PULSE WIDTH 50% RGS VGS 0 10% Figure 15. Switching Time Test Circuit Figure 16. Switching Time Waveform (c)2002 Fairchild Semiconductor Corporation FDH20N40 / FDP20N40 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1 |
Price & Availability of FDP20N40
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |